Interfacial phenomena at atomic resolution and multiscale properties of novel III-V semiconductors

The ultimate goal of this project is to provide a profound knowldge on III-V semiconductor heterostructures-nanostructures. The project will lead to extensive comprehension of growth mechanisms, microstructures and interfacial phenomena, as well as of the interrelation of structural and physical properties in order to control at the atomic level the synthesis, the growth, processing and properties of novel III-V semiconductors such as III-nitride ternary and quarternary alloys.