QCLs based on strain-compensated (In,Al)As+AlAs/(In,Ga)As emitting at room temperature in the (2.9 5.3 µm) spectral range

The proposed project focusses on investigating and developing high-performance (In,Al)As+AlAs/(In,Ga)As quantum cascade lasers (QCLs) on InP that will meet these requirements. The active region design is based on novel two-component barrier regions within strain-compensated (In,Al)As/(In,Ga)As structures prepared using gas-source molecular-beam epitaxy on InP substrates. The proposed work includes structure design, growth, processing, and the characterization of both materials and finished lasers. The anticipated results from the proposed research are both in the technology of the lasers including optimized designs and processing approaches as well as in the physics of their operation.