SFB 296 III-IV: Structural characterisation of mesoscopic interface structures by means of x-ray diffuse scattering

Data on shape, positional correlation and strain of mesoscopic (i.e. dimensions in the nanometer range) structures in semiconductor layers are prerequisites for understanding the electronic properties of such structures. Such data will be evaluted from x-ray diffuse scattering within the current project. This requires: measurements in different geometries at intense x-ray sources, mainly by means of synchrotron radiation, and an evaluation which is based on simulation calculations of x-ray diffuse scattering. A method developed for high resolution diffraction will be applied for a wider range of measurements and will be extended to diffraction geometries at grazing incidence and/or exit of x-rays by means of new theoretical approaches.